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Electrophoretic displays driven by all‐oxide thin‐film transistor backplanes fabricated using a solution process (Phys. Status Solidi A 10∕2015)
Author(s) -
Inoue Satoshi,
Phan Tue Trong,
Hori Tomoko,
Koyama Hiroaki,
Shimoda Tatsuya
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201570466
Subject(s) - research center , center (category theory) , engineering physics , library science , electrical engineering , engineering , political science , computer science , chemistry , law , crystallography
Amorphous oxide thin‐film transistors (TFTs) have attracted considerable attention for next‐generation displays. For largescale displays, a sophisticated solution process to replace the current vacuum deposition methods is strongly desired. However, most solution processes developed to date have only focused on the channel layer. Satoshi Inoue et al. (pp. 2133–2140 ) introduce all‐solution‐processed TFT active matrix backplanes in which all layers were prepared from precursor solutions. The gate lines, gate insulator, and channel layer comprised RuO 2 , La–Zr–O, and Zr–In–Zn–O films. A polysilazanebased SiO 2 film was used for the channel stopper layer. The source‐line and drain electrodes had a double‐layer structure comprising indium–tin oxide and RuO 2 films. Silsesquioxanebased SiO 2 and RuO 2 films were used for the passivation layer and pixel electrodes, respectively. These TFTs exhibited a field effect mobility of 2.68 cm 2 V ‐1 s ‐1 , a sub‐threshold swing of 1.09 V/decade, a threshold voltage of 3.06 V, and an on/off ratio of 10 5 . Active‐matrix electrophoretic displays (EPDs) with a resolution of 101.6 ppi were successfully fabricated using the all‐solution‐processed TFTs. Bi‐stable black/white images were confirmed in these TFT–EPDs for the first time.