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Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness (Phys. Status Solidi A 7∕2015)
Author(s) -
Noguchi Tomohiro,
Morita Koudai,
Simanullang Marolop,
Xu Zhengyu,
Usami Koichi,
Kawano Yukio,
Kodera Tetsuo,
Oda Shunri
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201570444
Subject(s) - nanowire , materials science , heterojunction , chemical vapor deposition , silicon , germanium , epitaxy , nanotechnology , shell (structure) , optoelectronics , quantum dot , composite material , layer (electronics)
Germanium/silicon core/shell nanowires (Ge/Si NWs) are expected to exceed the properties of single‐element Ge and Si nanowires as 1D structure materials. This is due to the valence band offset between Ge and Si at the heterostructure interface that serves as a confinement potential for the quantum well. In their work presented on pp. 1578–1581 , Noguchi et al. synthesized Ge/Si NWs with controlled thickness of Si shell in a low‐pressure chemical vapor deposition reactor (LPCVD) using gold nanoparticles as catalyst. The Ge NWs were first grown at low temperature (280 °C), followed by in situ deposition of Si shell at 450 °C. The Si shell was deposited epitaxially at the Ge NW core sidewalls. The nanowires have a core diameter of 20 nm and a shell thickness of 2 nm. A low deposition temperature is essential for the formation of thin Si shell. The authors also fabricated devices to measure the electrical and thermal properties of the Ge/Si NWs. The obtained results indicate the potential of Ge/Si NWs for thermoelectric devices.