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Revisiting Schottky barriers for CIGS solar cells: Electrical characterization of the Al/Cu(InGa)Se 2 contact
Author(s) -
Theys Bertrand,
Klinkert Torben,
Mollica Fabien,
Leite Enrique,
Donsanti Frédérique,
Jubault Marie,
Lincot Daniel
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201533063
Subject(s) - copper indium gallium selenide solar cells , equivalent series resistance , schottky barrier , materials science , optoelectronics , photovoltaic system , schottky diode , fabrication , diode , contact resistance , characterization (materials science) , semiconductor , voltage , engineering physics , solar cell , nanotechnology , electrical engineering , engineering , layer (electronics) , medicine , alternative medicine , pathology
Devices based on a metal‐semiconductor contact are potential candidates for the fabrication of photovoltaic cells as long as the corresponding junctions exhibit good rectifying properties and a low contact resistance. This article presents a detailed electrical analysis of the aluminum/CIGS system. The values of the representative parameters of the quality of the diode such as the barrier height, the ideality factor and the series resistance are deduced from an analytical study of the intensity‐voltage characteristics. It is concluded that this system does fulfill the necessary (but not sufficient) basic conditions for being used in photovoltaic cells.