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Dielectric enhancement of PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film
Author(s) -
Fan Yasong,
Chen Xiaoyang,
Habibul Arzigul,
Zhang Danyang,
Yu Ping
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201533059
Subject(s) - lanio , materials science , dielectric , microstructure , analytical chemistry (journal) , composite material , mineralogy , ferroelectricity , optoelectronics , chemistry , chromatography
Multilayer thick films (∼4 μm) with compositional PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 layers and one‐layer PZT thick films were prepared on the silicon substrate by radio‐frequency magnetron sputtering. PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film are characterized by highly preferential (100)‐oriented growth and columnar microstructure due to alternately introducing LaNiO 3 seeding layers. The effects of LaNiO 3 layers on microstructure and electrical properties of PbZr 0.3 Ti 0.7 O 3 thick films were investigated in detail. The results show that both PZT and PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film were pure perovskite crystalline phase. The PbZr 0.3 Ti 0.7 O 3 film texture was dense and well adhered on the LaNiO 3 layer. PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: ϵ r ∼2450 (10 kHz) and tan δ ∼0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched‐shaped polarization‐electric field hysteresis loops. The larger Rayleigh parameter, α ∼51.1408 cm kV −1 (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domain‐wall–defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail.