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Cubic‐structured tin selenide thin film as a novel solar cell absorber
Author(s) -
Nair P. K.,
BarriosSalgado E.,
Nair M. T. S.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201533040
Subject(s) - thin film , materials science , solar cell , selenide , orthorhombic crystal system , tin , band gap , chemical bath deposition , layer (electronics) , lead sulfide , direct and indirect band gaps , optoelectronics , crystallography , nanotechnology , crystal structure , metallurgy , chemistry , selenium , quantum dot
Tin selenide thin film with a simple cubic crystalline structure (SnSe‐CUB) of unit cell dimension a = 11.9632 Å is obtained via chemical deposition on a tin sulfide (SnS‐CUB) thin film base layer of simple cubic structure of a = 11.5873 Å. The SnSe‐CUB films obtained this way are thermally stable while heating to 300 °C. Its optical band gap is 1.4 eV. A thin film of 200 nm in thickness of this material in a solar cell may lead to a light generated current density of 23 mA cm −2 and a maximum of 29 mA cm −2 . Thin film of SnSe‐CUB possesses p‐type electrical conductivity of 5 × 10 −5 Ω −1 cm −1 , which is three orders of magnitude lower than that of SnSe films of orthorhombic crystalline structure. Overall, these characteristics make SnSe‐CUB thin film a novel solar cell absorber material.