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Processes of silver photodiffusion into Ge‐chalcogenide probed by neutron reflectivity technique
Author(s) -
Sakaguchi Yoshifumi,
Asaoka Hidehito,
Uozumi Yuki,
Kawakita Yukinobu,
Ito Takayoshi,
Kubota Masato,
Yamazaki Dai,
Soyama Kazuhiko,
Sheoran Gaurav,
Mitkova Maria
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201533037
Subject(s) - chalcogenide , layer (electronics) , substrate (aquarium) , materials science , germanium , stack (abstract data type) , optoelectronics , analytical chemistry (journal) , optics , chemistry , nanotechnology , silicon , oceanography , physics , chromatography , computer science , programming language , geology
We performed time‐resolved neutron reflectivity measurement for stacks of Ag 500 Å/Ge 25 S 75 1500 Å/Si substrate and Ge 33 S 67 1500 Å/Ag 500 Å/Si substrate to clarify silver photodiffusion process into Ge‐chalcogenide layer. For Ag 500 Å/Ge 25 S 75 1500 Å/Si substrate stack, it was found that the silver layer dissolves into Ge‐chalcogenide layer within 2 min by the light exposure, and Ag‐doped reaction layer forms. However, two‐layer structure with thicknesses of 800 and 1100 Å was established by a prolonged light exposure for 70 min and it did not change to form one homogeneous layer. For Ge 33 S 67 1500 Å/Ag 500 Å/Si substrate stack, silver rapidly dissolves into Ge 33 S 67 layer leaving a thin silver layer in the first 2 min, and then, silver slowly dissolves from the silver layer as the next reaction process. At approximately 25 min light exposure, an anomalous decrease in the neutron reflectivity, suggesting a formation of macroscopic surface roughness, was observed.