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Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications
Author(s) -
Park Jun Hyuk,
Jeong Jin Hwan,
Choi Doo Jin
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201533008
Subject(s) - crystallinity , crystallization , materials science , nitrogen , doping , amorphous solid , nitride , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , composite material , chemistry , crystallography , environmental chemistry , organic chemistry , layer (electronics) , engineering
In this paper, the crystallization behavior of nitrogen‐doped SbSe films was investigated as a function of nitrogen content. We found that the SET resistance and crystallization temperature of nitrogen‐doped SbSe films were higher than those of un‐doped SbSe films. Moreover, the crystallinity and average grain area decreased with increasing nitrogen content because of the formation of nitrides, which disturbed crystal growth. Theoretical modeling was conducted to verify the effects of nitrogen doping, and the results were in good agreement with the experimental results. Through the optical band gap measurement, we found that nitrogen doping is an effective method for improving amorphous stability and reducing RESET current. In addition, the newly formed nitrides improved the chemical composition stability by suppressing element loss. After optimizing the nitrogen contents, nitrogen‐doped SbSe films are expected to be promising materials for PCRAM applications.