The effect of bottom LaB 6  electrode and La 2 O 3  interlayer on resistance switching in devices based on Li‐doped ZnO films | Zendy

Kafadaryan Y. | Zendy; Igityan A. | Zendy; Aghamalyan N. | Zendy; Petrosyan S. | Zendy

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The effect of bottom LaB 6 electrode and La 2 O 3 interlayer on resistance switching in devices based on Li‐doped ZnO films

Author(s) -

Kafadaryan Y.,

Igityan A.,

Aghamalyan N.,

Petrosyan S.

Publication year - 2016

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201533004

Subject(s) - bistability , materials science , work function , doping , polarity (international relations) , electrode , lithium (medication) , semiconductor , switching time , diode , optoelectronics , metal , nanotechnology , chemistry , layer (electronics) , medicine , biochemistry , endocrinology , metallurgy , cell

Resistance switching (RS) characteristics of Al/ZnO:Li/LaB 6 and Al/ZnO:Li/La 2 O 3 /LaB 6 devices in which LaB 6 and lithium‐doped ZnO (ZnO:Li) films are regarded as shallow work function metal and p‐type semiconductor, respectively, are studied. The alternation from bistable unipolar memory switching (URS) to monostable threshold switching (MTS) in the Al/ZnO:Li/LaB 6 device is observed. These two switching behaviors can be activated separately depending on the polarity of applied dc voltage: with a positive polarity the URS behavior is measured, while the MTS behavior is observed with a negative polarity. With increase in the number of switching cycles, the MTS and URS behaviors irreversibly transform to bipolar resistance switching (BRS) behavior. The Al/ZnO:Li/La 2 O 3 /LaB 6 device shows only the BRS behavior, but after certain number of cycles device serves as a rectifying diode. On the basis of the I–V and C – V characteristics, it is concluded that RS properties depend on the barrier height and reactivity between LaB 6 metal and ZnO:Li oxide.

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