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Monitoring the phase evolution of Cu(In,Ga)Se 2 by different Se flux via in‐situ XRD
Author(s) -
ZahediAzad Setareh,
Jarzembowski Enrico,
Hartnauer Stefan,
Wägele Leonard,
Greiner Dieter,
Scheer Roland
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532991
Subject(s) - flux (metallurgy) , in situ , materials science , substrate (aquarium) , diffraction , phase (matter) , crystallography , orientation (vector space) , epitaxy , deposition (geology) , evaporation , analytical chemistry (journal) , crystal (programming language) , metallurgy , chemistry , nanotechnology , optics , geology , thermodynamics , layer (electronics) , geometry , chromatography , physics , organic chemistry , paleontology , oceanography , mathematics , sediment , computer science , programming language
Through in‐situ X‐ray diffraction, we examined the phase evolution of Cu(In,Ga)Se 2 films deposited by three stage co‐evaporation with regard to Se flux and substrate temperature. The deposition method is based on the sequence of Cu‐poor/Cu‐rich/Cu‐poor, which is beneficial for improving the crystal quality as well as the conversi‐on efficiency. We find that while the Se flux during the first stage determines the final orientation, the substrate temperature moderates the degree of the preferred orientation. The orientation of the intermediate Cu 2 Se phase follows the preferred orientation of the CIGSe film, indicating an epitaxial relationship between the two phases.