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Control of carrier concentration in SnS films by annealing with S and Sn
Author(s) -
Gotoh Tamihiro
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532986
Subject(s) - seebeck coefficient , electrical resistivity and conductivity , annealing (glass) , materials science , thermoelectric effect , analytical chemistry (journal) , thin film , optoelectronics , condensed matter physics , nanotechnology , chemistry , composite material , thermal conductivity , electrical engineering , physics , chromatography , engineering , thermodynamics
The carrier properties of thermally evaporated SnS films were examined by electrical resistivity and thermopower measurements. The SnS films were annealed at 300 °C with constituent elements such as S powder and Sn films in order to control carrier concentration. The S‐ or Sn‐annealed SnS films exhibit optical bandgaps of 1.2–1.36 eV, electrical resistivities of 0.25–5.4 × 10 3 Ωcm, activation energies of 0.15–0.2 eV, and Seebeck coefficients of 0.8–2.7 mV K −1 . The changes of electrical resistivity and Seebeck coefficient were observed for SnS films by annealing with S and Sn. These results indicate that annealing treatments with S and Sn cause changes of carrier concentration in SnS films. Thermopower measurement is useful for the carrier evaluation of semiconducting SnS films.