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Hydrogen incorporation, stability, and release effects in thin film silicon
Author(s) -
Beyer Wolfhard
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532976
Subject(s) - hydrogen , silicon , amorphous silicon , materials science , amorphous solid , diffusion , microcrystalline , thin film , nanocrystalline silicon , chemical engineering , crystalline silicon , nanotechnology , chemistry , optoelectronics , crystallography , organic chemistry , physics , thermodynamics , engineering
Thin film silicon (amorphous silicon, microcrystalline silicon) contains typically about 10 at.% of hydrogen. Several hydrogen effects in connection with hydrogen incorporation, hydrogen diffusion/stability, and hydrogen release have been observed and are reviewed with focus on the experimental techniques of infrared absorption, hydrogen diffusion, and effusion measurements. Hydrogen effects in hydrogen‐implanted amorphous, microcrystalline, and crystalline silicon materials are also discussed. The knowledge and the understanding of these effects may help for improved products and is, furthermore, a challenging scientific task.