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Structural and optical properties of a‐SiO x :H thin films deposited by the GJ EBP CVD method
Author(s) -
Baranov Evgeniy,
Khmel Sergey,
Zamchiy Alexandr,
Buyko Maxim
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532959
Subject(s) - suboxide , analytical chemistry (journal) , thin film , materials science , band gap , amorphous solid , chemical vapor deposition , substrate (aquarium) , fourier transform infrared spectroscopy , silicon , oxygen , argon , plasma enhanced chemical vapor deposition , refractive index , chemistry , optics , crystallography , nanotechnology , organic chemistry , optoelectronics , oceanography , physics , geology
In this work, hydrogenated amorphous silicon suboxide (a‐SiO x :H) thin films have been prepared by gas‐jet electron beam plasma chemical vapor deposition method (GJ EBP CVD) at a substrate temperature 260 °C. The argon to monosilane ratio R = [Ar]/[SiH 4 ] was varied and the influence of the ratio R on the structural and optical properties was investigated. In this method, R affects an oxygen concentration in the film of the silicon suboxide. FTIR measurement showed a decrease of the oxygen concentration from 40.7 to 11% with increasing R . The analysis of FTIR spectra showed the containing a large number polysilane (Si–H 2 ) n groups that suggest the material column structure. Optical transmission spectra were recorded to investigate the optical properties and thickness of the a‐SiO x :H thin films. The maximum of the growth rate is 2 nm s −1 at R = 80. The optical bandgap E g was derived from Tauc plots. It was found that the increase in the oxygen concentration not only leads to the increase optical bandgap, but also to the decrease the refraction index.