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Interface passivation of liquid‐phase crystallized silicon on glass studied with high‐frequency capacitance–voltage measurements
Author(s) -
Preissler Natalie,
Töfflinger Jan Amaru,
Shutsko Ivan,
Gabriel Onno,
Calnan Sonya,
Stannowski Bernd,
Rech Bernd,
Schlatmann Rutger
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532957
Subject(s) - passivation , materials science , analytical chemistry (journal) , dielectric , capacitance , silicon , hydrogen , hysteresis , phase (matter) , microwave , layer (electronics) , optoelectronics , chemistry , condensed matter physics , electrode , nanotechnology , physics , organic chemistry , chromatography , quantum mechanics
The passivation quality at the interface between dielectric interlayer (IL) stacks and liquid‐phase crystallized silicon (LPC‐Si) was investigated by means of high‐frequency capacitance–voltage ( C – V ) measurements. The developed device structure was based on a molybdenum layer sandwiched between the glass substrate and the IL/LPC‐Si stack. C – V curves were discussed in terms of hysteresis formation and capacitance relaxation. We varied the nitrogen and hydrogen content in the a‐SiO x N y :H layer adjacent to the LPC‐Si and studied the effects on the defect state density at the IL/LPC‐Si interface ( D it ) as well as on the effective charge density in the IL ( Q IL,eff ). Both parameters are crucial for the analysis of chemical and field‐effect passivation. Furthermore, the effect of an additional hydrogen plasma treatment (HPT) on D it and Q IL,eff was investigated. A Gaussian‐like defect distribution at around 0.1 eV above the mid gap energy is significantly reduced by the additional HPT. With additional HPT, the lowest D it and highest Q IL,eff at mid gap, i.e., D it = (3.5 ± 0.7) × 10 11 eV −1 cm −2 and Q IL,eff = (1.6 ± 0.3) × 10 12 cm −2 , correspond to the passivation by an a‐SiO x N y :H layer with a low nitrogen and high hydrogen content.