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Effect of substrate temperature on the plasma texturing process of c‐Si wafers for black silicon solar cells
Author(s) -
Murias D.,
Moreno M.,
ReyesBetanzo C.,
Torres A.,
Rosales P.,
Martínez J.,
Ambrosio R.,
Roca i Cabarrocas P.,
Carlos N.,
Itzmoyotl A.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532954
Subject(s) - wafer , black silicon , silicon , substrate (aquarium) , materials science , plasma , pyramid (geometry) , optoelectronics , chemical engineering , analytical chemistry (journal) , optics , chemistry , chromatography , oceanography , physics , quantum mechanics , geology , engineering
We report on a study of the effect of the substrate temperature on the formation of black silicon on c‐Si wafers and consequently on the reduction of the wafer surface diffuse reflectance. We observed that lower substrate temperatures enhance the texturing processes producing completely black silicon surfaces. The optimized substrate temperature (2.5 °C) used during the plasma process has resulted in the formation of well‐defined pyramid‐like structures as is done by wet processes. Moreover, the textured c‐Si wafers have very low diffuse reflectance values, as low as 3%, which are much lower than those values obtained using wet texturing processes based on KOH and NaOH solutions (which are in the range of 12–14%).