Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase

Various plasma process parameters such as coupled power, process pressure ( p ), gas flow, and source gas ratios (SiH 4 :H 2 ) play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). One of the less studied parameters for NP growth is the inter‐electrode distance, d . Our study focuses on the effect of d and demonstrates how a reactor with larger d (refers to d  = 30 mm) is a simple method to enhance the crystalline ratio of NPs produced in them compared with a standard d (refers to d  = 10 mm). Increasing d or p is not strictly equivalent, and we show that for our reactor p  > 0.8 mbar is most effective at d  = 30 mm to obtain purely crystalline NPs. We also establish how the larger d opens up a wider parameter space for the synthesis of crystalline Si NPs. Completely crystalline silicon NPs synthesized in this study at p  = 0.8 mbar and larger d of 30 mm.