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Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase
Author(s) -
Mohan Akshatha,
Schropp Ruud E. I.,
Poulios Ioannis,
Goedheer Wim J.,
Rath Jatin K.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532938
Subject(s) - crystallinity , nanoparticle , materials science , gas phase , phase (matter) , analytical chemistry (journal) , silicon , nanotechnology , crystalline silicon , chemical engineering , chemistry , optoelectronics , composite material , chromatography , organic chemistry , engineering
Various plasma process parameters such as coupled power, process pressure ( p ), gas flow, and source gas ratios (SiH 4 :H 2 ) play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). One of the less studied parameters for NP growth is the inter‐electrode distance, d . Our study focuses on the effect of d and demonstrates how a reactor with larger d (refers to d = 30 mm) is a simple method to enhance the crystalline ratio of NPs produced in them compared with a standard d (refers to d = 10 mm). Increasing d or p is not strictly equivalent, and we show that for our reactor p > 0.8 mbar is most effective at d = 30 mm to obtain purely crystalline NPs. We also establish how the larger d opens up a wider parameter space for the synthesis of crystalline Si NPs. Completely crystalline silicon NPs synthesized in this study at p = 0.8 mbar and larger d of 30 mm.