Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH 4 –H 2  discharge in the a‐Si:H to μc‐Si:H transition regime | Zendy

Landheer Kees | Zendy; Goedheer Wim J. | Zendy; Poulios Ioannis | Zendy; Schropp Ruud E. I. | Zendy; Rath Jatindra K. | Zendy

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Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH 4 –H 2 discharge in the a‐Si:H to μc‐Si:H transition regime

Author(s) -

Landheer Kees,

Goedheer Wim J.,

Poulios Ioannis,

Schropp Ruud E. I.,

Rath Jatindra K.

Publication year - 2016

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201532917

Subject(s) - hydrogen , ion , silicon , plasma enhanced chemical vapor deposition , amorphous solid , analytical chemistry (journal) , dilution , atomic physics , amorphous silicon , materials science , etching (microfabrication) , crystalline silicon , chemistry , layer (electronics) , nanotechnology , crystallography , physics , optoelectronics , organic chemistry , chromatography , thermodynamics

We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H 2 + and SiH y + IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6 eV lower peak position for the simulations. An increasing SiH y + ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by H y + ion bombardment.

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