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Crystallization behavior during transparent In 2 O 3 ‐ZnO film growth
Author(s) -
Jia Junjun,
Nakamura Shinichi,
Shigesato Yuzo
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532887
Subject(s) - crystallization , materials science , crystallite , ellipsometry , transmission electron microscopy , substrate (aquarium) , sputtering , chemical engineering , sputter deposition , grain growth , grain size , crystallography , thin film , nanotechnology , composite material , metallurgy , chemistry , geology , engineering , oceanography
Abstract Structural evolution of transparent conductive In 2 O 3 ‐ZnO (IZO) films with increasing substrate temperature during sputtering was studied using transmission electron microscopy (TEM) and spectroscopic ellipsometry. Increasing the substrate temperature can induce film crystallization in the initial growth stage, and enhance the crystallization of IZO films. Extensive simulations using ellipsometry data demonstrated a decrease in the crystallization rate for IZO films deposited between 200 and 300 °C, which is attributed to the influence of the interference between nearby growing grains. TEM observations also reveal that the growth competition between different crystallites leads to an increase in the lateral grain size with increasing substrate temperature.