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Mott lecture: How bonding concepts can help understand amorphous semiconductor behavior
Author(s) -
Robertson John
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532875
Subject(s) - chalcogenide , semiconductor , materials science , amorphous semiconductors , amorphous solid , doping , amorphous carbon , covalent bond , nanotechnology , chemical physics , condensed matter physics , optoelectronics , crystallography , thin film , chemistry , physics , quantum mechanics
The article discusses how bonding concepts have allowed the development of amorphous semiconductors, in particular the 8− N rule of bonding, the doping mechanism in a‐Si:H, the weak effect of disorder on s states in amorphous oxide semiconductors, the strong effect of disorder on p states in amorphous carbon, and the effect of the change from resonant bonding to simple molecular covalent bonding in chalcogenide phase change materials.