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Magnesium‐doped cuprous oxide (Mg:Cu 2 O) thin films as a transparent p‐type semiconductor
Author(s) -
Resende João,
Jiménez Carmen,
Nguyen Ngoc Duy,
Deschanvres JeanLuc
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532870
Subject(s) - materials science , doping , semiconductor , oxide , magnesium , thin film , electrical resistivity and conductivity , metal , optoelectronics , nanotechnology , metallurgy , electrical engineering , engineering
The lack of a successful p‐type transparent semiconductor delays the future implementation of transparent electronics. In the group semiconducting compounds, cuprous oxide (Cu 2 O) presents promising electrical and manufacturing features that establish it as a suitable candidate for p‐type transparent semiconductors. However, high absorbance in the visible range reduces its application practical devices. In this work, we achieved the incorporation of magnesium in cuprous oxide grown by aerosol‐assisted metal‐organic chemical vapour deposition. The fabricated doped thin films reached up to 17% of magnesium, resulting in morphology changes. Electrical resistivity was reduced down to values as low as 6.6 Ωcm, due to the increase of charge‐carrier density. The optical transparency was enhanced compared to intrinsic cuprous oxide.