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Partially printed resistive memory cells on rigid and flexible substrates
Author(s) -
Schwarz Christian,
Kaiser Michael,
Jacob Selma F.,
Schindler Christina
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532851
Subject(s) - resistive random access memory , materials science , wafer , fabrication , stack (abstract data type) , optoelectronics , resistive touchscreen , electrode , voltage , memristor , silicon , printed circuit board , nanotechnology , electrical engineering , computer science , chemistry , engineering , medicine , alternative medicine , pathology , programming language
The fabrication and characterization of resistive memory cells based on a silver/silicon oxide stack with a printed polymer electrode is described. Memory cells were fabricated on standard silicon wafers as well as on flexible polymer foils. The partially printed cells showed low switching voltages and currents. Together with the possibility of multi‐level data storage even on flexible substrates, the potential for low power, high density, and printed cheap memory cells is demonstrated. Memristor with printed electrode and its current–voltage characteristic.