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Electrochemical processes and device improvement in conductive bridge RAM cells
Author(s) -
Goux Ludovic,
Valov Ilia
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532813
Subject(s) - scaling , reliability (semiconductor) , nanotechnology , protein filament , electrical conductor , materials science , bridge (graph theory) , computer science , electronic engineering , selection (genetic algorithm) , engineering physics , optoelectronics , engineering , physics , composite material , artificial intelligence , medicine , power (physics) , geometry , mathematics , quantum mechanics
In this paper, we discuss the recent progress on the fundamental understandings of ECM/CBRAM cells but also on the improved device structures and reliability for high‐density applications. The influences of the local chemical environment and the material selection/combination are highlighted, and the filament dynamics is described in a general framework that relates all the reported switching modes. Furthermore we also detail some correlation evidences between the filament shape and device electrical characteristics. Finally, we discuss technological challenges related to current‐scaling and cell size‐scaling. Large switching variability associated to low current needs to be mitigated by appropriate Write‐verify methods, while cell scaling requires novel processing techniques such as Cu dry‐etch.