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Reliability aspects of hydrogen‐doped indium oxide
Author(s) -
Jost Gabrielle C. E.,
Hamri Alexander N.,
Köhler Florian,
Hüpkes Jürgen
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532806
Subject(s) - materials science , hydrogen , amorphous solid , indium , oxide , charge carrier , polycrystalline silicon , doping , annealing (glass) , crystallite , degradation (telecommunications) , optoelectronics , chemical engineering , nanotechnology , composite material , electronic engineering , thin film transistor , chemistry , metallurgy , organic chemistry , layer (electronics) , engineering
We demonstrate an alternative route to reliably prepare hydrogen‐doped indium oxide (In 2 O 3 :H). The common hydrogen source, water vapor, was substituted in our process by hydrogen and oxygen gas. The resulting films showed similar optical and electrical properties. Nevertheless, the process using gaseous hydrogen led to a simplification of the deposition process. By replacing the hydrogen source we increased the reproducibility of the electrical film properties significantly, thus, paving the way for a reliable device implementation of the material. Furthermore, we investigated the degradation behavior of In 2 O 3 :H under damp heat conditions as preliminary test for long‐term durability in photovoltaic devices. The results revealed a degradation of the electrical properties that differs in detail regarding the amorphous and polycrystalline material. In the amorphous material, the main degradation is caused by loss of charge carriers, whereas in the polycrystalline material a drop of the charge carrier mobility causes a significant rise of the resistivity. However, we show that the relative degradation of the In 2 O 3 :H films is similar to other transparent contacts that are implemented in solar cells. Finally, we demonstrate that the degradation of the charge carrier mobility in the polycrystalline In 2 O 3 :H films is completely reversible by vacuum annealing at 200 °C.