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Integrated enhancement/depletion‐mode GaN MIS‐HEMTs for high‐speed mixed‐signal applications
Author(s) -
Gao Tao,
Xu Ruimin,
Kong Yuechan,
Zhou Jianjun,
Zhang Kai,
Kong Cen,
Peng Daqing,
Chen Tangsheng
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532805
Subject(s) - high electron mobility transistor , materials science , optoelectronics , transistor , oscillation (cell signaling) , voltage , ring oscillator , insulator (electricity) , signal (programming language) , electrical engineering , cmos , engineering , computer science , chemistry , programming language , biochemistry
Monolithically integrated enhancement/depletion (E/D)‐mode AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS‐HEMTs) are being developed for high‐speed mixed‐signal applications. Partially recessed gate combined with buffered gate insulator produce remarkably improved trade‐off between the threshold voltage (1.4 V) and current density (848 mA mm −1 ) in the E‐mode device. Record peak transconductances of 311 and 248 mA mm −1 are obtained for D‐ and E‐mode MIS‐HEMTs, respectively. A direct‐coupled FET logic (DCFL) 51‐stage ring oscillator implemented using the MIS‐HEMT technique is fabricated, which exhibits high‐speed performance with an oscillation frequency of 908 MHz and a high output voltage swing of 1.48 V.