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Optoelectronic devices on AlGaN/GaN HEMT platform
Author(s) -
Li Baikui,
Tang Xi,
Wang Jiang,
Chen Kevin J.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532782
Subject(s) - high electron mobility transistor , optoelectronics , materials science , schottky diode , heterojunction , passivation , light emitting diode , gallium nitride , diode , wafer , transistor , chip , doping , schottky barrier , nanotechnology , electrical engineering , engineering , layer (electronics) , voltage
Integration of a photon source into the AlGaN/GaN high election mobility transistor (HEMT) platform will realize the functionality of on‐chip optical pumping of deep electron traps which suppress the dynamic performances of power HEMTs. Here, we report a Schottky‐on‐heterojunction light‐emitting diode (SoH‐LED) realized on the p‐doping‐free lateral AlGaN/GaN heterostructure. A physical mode based on hot electron induced surface states impact ionization was proposed to explain the hole generation and injection processes in this p‐doping‐free SoH‐LED. Since the SoH‐LED shares identical epitaxial structures with HEMT, integration of SoH‐LED and HEMT requires no additional epi‐layers during the wafer growth and minimum process modification during device fabrication. The SoH‐LED structure was seamlessly integrated into the HEMT platform as an on‐chip photon source. Experiment results showed that the SoH‐LED photons can effectively assist the electron de‐trapping processes from both of the surface and bulk deep traps, demonstrating the feasibility of using on‐chip generated photons to improve the dynamic performances of AlGaN/GaN power HEMTs.