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Effects of surface morphology and C concentration in C‐doped GaN buffer on breakdown voltage of AlGaN/GaN HEMTs on free‐standing GaN substrate
Author(s) -
Tanabe Shinichi,
Watanabe Noriyuki,
Uchida Masahiro,
Matsuzaki Hideaki
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532781
Subject(s) - buffer (optical fiber) , high electron mobility transistor , materials science , breakdown voltage , optoelectronics , doping , substrate (aquarium) , transistor , wide bandgap semiconductor , morphology (biology) , voltage , electrical engineering , oceanography , geology , biology , genetics , engineering
We report on the validity of using a C‐doped GaN buffer to achieve high‐breakdown‐voltage AlGaN/GaN high‐electron mobility transistors (HEMTs) on conductive free‐standing GaN substrates. We use trimethygallium to dope C into the buffer. We show that breakdown voltage depends not only on the C concentration of the buffer but also on the surface morphology of the HEMT structure. We demonstrate off‐state breakdown voltage of over 2 kV by controlling the C concentration of the buffer, thickness of the buffer, and the surface morphology.