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Investigation of 1.3 μm AlGaInAs multi‐quantum wells for electro‐absorption modulated laser
Author(s) -
Binet Guillaume,
Decobert Jean,
Lagay Nadine,
Chimot Nicolas,
Kazmierski Christophe
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532729
Subject(s) - optoelectronics , photocurrent , laser , lasing threshold , materials science , photonics , quantum well , electro absorption modulator , absorption (acoustics) , modulation (music) , photonic integrated circuit , offset (computer science) , band offset , optics , quantum dot laser , semiconductor laser theory , physics , band gap , computer science , semiconductor , wavelength , valence band , acoustics , composite material , programming language
Monolithic photonic integrated circuits (PIC) transmitters using the prefixed optical phase switching concept for BPSK modulation format have been shown promising at 1.55 μm band. These devices could also be crucial for short reach connections and access networks. With this aim, we are studying basic quantum well designs for a laser and an electro‐absorption modulator switch to be integrated by selective area growth into PICs at 1.3 μm. Photocurrent measurements and band offset modeling have been performed to determine the MQW stack well‐fitted for this application. Broad area laser measurements have also been checked on these structures to verify the material lasing properties. A 6 nm thick well with low barrier seems to be the best trade‐off between absorption and shift for 1.3 μm EAM and it also gives good lasing properties.