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Atomistic study of band structure and transport in extremely thin channel InP MOSFETs
Author(s) -
Dutta Tapas,
Kumar Piyush,
Rastogi Priyank,
Agarwal Amit,
Chauhan Yogesh Singh
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532727
Subject(s) - mosfet , channel (broadcasting) , materials science , optoelectronics , transistor , band gap , electronic band structure , condensed matter physics , density functional theory , silicon , ballistic conduction , physics , electrical engineering , quantum mechanics , electron , engineering , voltage
Abstractauthoren III–V channel materials have emerged as one of the major contenders to replace silicon as the channel material in sub‐10 nm transistors. Motivated by this, we study the feasibility of using InP as a channel material in extremely scaled MOSFETs. In this work, we have performed a comprehensive analysis of the band structure of extremely thin InP channels with different surface orientations and transport directions using first‐principle density functional theory calculations. We show that the effective masses in the Γ valley and the bandgap increase monotonically as the thickness decreases for each orientation. Valley symmetry is found to be orientation dependent. Further, the performance of extremely thin InP channel double‐gate MOSFET is analyzed via semi‐classical as well as full quantum ballistic transport simulations using the non‐equilibrium Green's function (NEGF) approach.