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Synthesis of wide bandgap Ga 2 O 3 ( E g ∼ 4.6–4.7 eV) thin films on sapphire by low pressure chemical vapor deposition
Author(s) -
Rafique Subrina,
Han Lu,
Zhao Hongping
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532711
Subject(s) - sapphire , materials science , thin film , chemical vapor deposition , substrate (aquarium) , epitaxy , analytical chemistry (journal) , band gap , absorption edge , crystal (programming language) , argon , absorption spectroscopy , absorption (acoustics) , optoelectronics , optics , chemistry , nanotechnology , laser , layer (electronics) , composite material , oceanography , physics , organic chemistry , chromatography , geology , computer science , programming language
This paper presents the synthesis of wide bandgap Ga 2 O 3 thin films on differently oriented sapphire substrates by using low pressure chemical vapor deposition (LPCVD) technique. The effects of substrate orientation on the Ga 2 O 3 thin film surface morphology, crystal orientation, growth rate, and optical properties were studied. The Ga 2 O 3 thin films were synthesized on the c ‐plane (0001), a ‐plane (11−20), and r ‐plane (1−102) sapphire substrates using high purity metallic Ga and oxygen (O 2 ) as source materials and argon (Ar) as carrier gas. The Ga 2 O 3 thin films grown on the c ‐plane and a ‐plane sapphire substrates are composed of pure β‐Ga 2 O 3 . A mixture of β‐Ga 2 O 3 and α‐Ga 2 O 3 phases is observed for the films grown on r ‐plane sapphire substrate. Well‐distinct transmission, absorption, and reflectance edge at E g ∼ 4.6–4.7 eV are visible for all the films in the optical spectra measured in the spectral range from 200 to 800 nm.