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Uniform growth of III‐nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor
Author(s) -
Su Jie,
Armour Eric,
Lee Soo Min,
Arif Ronald,
Papasouliotis George D.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532708
Subject(s) - metalorganic vapour phase epitaxy , materials science , wafer , nitride , substrate (aquarium) , silicon , optoelectronics , doping , layer (electronics) , composite material , epitaxy , oceanography , geology
We are reporting on the uniform growth of III‐nitrides (AlN, GaN, and AlGaN layers) on 200 mm silicon substrates using Veeco's Propel rotating disk, single wafer vertical MOCVD reactor. The reactor is designed for homogeneous alkyl/hydride flow distribution, and uniform temperature profile, resulting in excellent uniformity in epilayer thickness, alloy composition, and doping profiles. Thickness uniformity for single layers of AlN and GaN are 0.71 and 0.67% 1σ, respectively, without edge exclusion. A 21 nm Al 0.23 Ga 0.77 N layer has 0.29%, 1σ uniformity for Al composition, and a range of 1.2 nm (max–min) for thickness. Uniformity of magnesium and carbon doping profiles is presented across the 200 mm substrate.