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The enhancement of the output characteristics in the GaN based multiple‐channel planar Gunn diode
Author(s) -
Wang Ying,
Yang LinAn,
Wang ZhiZhe,
Ao JinPing,
Hao Yue
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532703
Subject(s) - gunn diode , planar , diode , optoelectronics , superposition principle , terahertz radiation , materials science , high electron mobility transistor , channel (broadcasting) , physics , dipole , electrical engineering , computer science , voltage , transistor , engineering , computer graphics (images) , quantum mechanics
We present an explicit numerical analysis on GaN‐based multi‐quantum‐well planar Gunn diodes. The simulation demonstrates that Gunn oscillations generated in the multi‐channel can be self‐synchronized to each other, which significantly improves the output characteristics of planar Gunn diode due to the superposition of the dipole domain in each channel. The optimized output characteristics are obtained in the triple‐channel Gunn diode, where the RF output power is about 6.45 mW and the DC‐to‐RF conversion efficiency is about 2.39% at the fundamental frequency of 216.05 GHz, more than three times larger than that of the single‐channel AlGaN/GaN Gunn diode. The proposed GaN HEMT‐like multi‐channel planar Gunn diode with higher level of output characteristics shows great potential as a solid‐state radiation source of millimeter‐wave and sub‐terahertz.