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Evaluations of crystal defects of 3C‐SiC ( 1 ¯ 1 ¯ 1 ¯ ) film on Si(110) substrate
Author(s) -
Sambonsuge Shota,
Ito Shun,
Jiao Sai,
Nagasawa Hiroyuki,
Fukidome Hirokazu,
Filimonov Sergey N.,
Suemitsu Maki
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532675
Subject(s) - materials science , transmission electron microscopy , planar , epitaxy , substrate (aquarium) , crystallography , diffraction , silicon carbide , optoelectronics , nanotechnology , optics , composite material , chemistry , layer (electronics) , physics , computer science , geology , oceanography , computer graphics (images)
Detailed analysis on the planar defects in rotated 3C‐SiC(1 ¯1 ¯1 ¯ ) films grown on Si(110) substrates have been conducted by using X‐ray diffraction and cross‐sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C‐SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C‐SiC film are discussed.