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Transmission electron microscopy study for investigating high‐temperature reliability of Ti 10 W 90 ‐based and Ta‐based diffusion barriers up to 600°C
Author(s) -
Budhiman Nando,
Schürmann Ulrich,
Jensen Björn,
Chemnitz Steffen,
Kienle Lorenz,
Wagner Bernhard
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532654
Subject(s) - reliability (semiconductor) , transmission electron microscopy , diffusion , materials science , transmission (telecommunications) , engineering physics , psychology , reliability engineering , nanotechnology , computer science , physics , thermodynamics , engineering , telecommunications , power (physics)
Abstract Abstractauthoren Transmission electron microscopy (TEM) analysis, including energy dispersive X‐ray (EDX) (elemental mapping, line, and point measurements) and energy filtered TEM (EFTEM) methods, is applied to investigate the high temperature reliability, especially material diffusion, of two types of diffusion barriers: titanium–tungsten‐based (Ti10 W90 ‐based) and tantalum‐based (Ta‐based), with nickel (Ni) layer on top. Both barriers were deposited as a form of stacked layers on sili‐con (Si) wafers using the physical vapor deposition (PVD) technique. TEM analysis is performed on both barriers before and after annealing (at 600 deg C for 24 h inside a vacuum chamber). No diffusion of material into the Si substrate as observed. Additionally, only diffusion between the Ni and adjoining Ti10 W90 layers, and between Ni and adjoining Ta layers in the Ti10 W90 ‐based and Ta‐based barriers, respectively, are observed due to annealing.