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The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed‐assisted directional solidification of silicon
Author(s) -
Autruffe Antoine,
Kivambe Maulid,
Arnberg Lars,
Di Sabatino Marisa
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532651
Subject(s) - monocrystalline silicon , ingot , grain boundary , materials science , silicon , tilt (camera) , dislocation , grain boundary strengthening , precipitation , directional solidification , oxygen , crystallography , metallurgy , condensed matter physics , composite material , geometry , microstructure , chemistry , alloy , physics , mathematics , organic chemistry , meteorology
We have investigated the source of dislocations generated during growth and subsequent cooling of quasi‐monocrystalline silicon. Bi‐crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s −1 . We observe higher density of grain boundary‐associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.