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Influence of ethylene glycol on efficient photoelectrochemical activity of BiVO 4 photoanode via AACVD
Author(s) -
MohdNasir S. N. F.,
MatTeridi M. A.,
Ebadi M.,
Sagu J. S.,
Sulaiman M. Y.,
Ludin N. A.,
Ibrahim M. A.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532622
Subject(s) - materials science , bismuth vanadate , band gap , dielectric spectroscopy , thin film , ethylene glycol , chemical vapor deposition , analytical chemistry (journal) , chemical engineering , nanotechnology , electrochemistry , optoelectronics , chemistry , photocatalysis , electrode , engineering , catalysis , biochemistry , chromatography
Thin‐film bismuth vanadate, BiVO 4 photoanode was fabricated on fluorine‐doped tin oxide via aerosol‐assisted chemical vapor deposition, AACVD, with ethylene glycol as a solvent. The structure and morphology of the BiVO 4 thin film were analyzed using X‐ray diffraction and field emission scanning electron microscopy and found to have monoclinic clinobisvanite structure with a noncompact nanoparticle distribution. The optical properties and bandgap estimation showed the BiVO 4 thin film exhibited a characteristic peak in the visible‐light region with bandgap energy of 2.43 eV. The photoelectrochemical properties were investigated in a 0.5 M Na 2 SO 4 electrolyte without any sacrificial agent or electron/hole scavenger resulting in 0.73 mA cm −2 at 1.23 V vs. SCE. The electrochemical impedance spectroscopy revealed good charge‐transfer characteristics of the photoanode and the Mott–Schottky plot was used to estimate the conduction and valence‐band position of BiVO 4 .