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Temperature‐dependent optical, spectral, and thermal characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes
Author(s) -
Lee Soo Hyun,
Guan XiangYu,
Jeon SooKun,
Yu Jae Su
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532620
Subject(s) - junction temperature , materials science , optoelectronics , light emitting diode , diode , ultraviolet , heat sink , thermal resistance , wavelength , voltage , optical power , thermal , thermal management of high power leds , operating temperature , optics , laser , physics , quantum mechanics , meteorology , thermodynamics
The temperature‐dependent device characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes, operating at λ ∼380 nm, with a chip size of 0.5 × 1 mm 2 were reported. Their optical and spectral properties were measured and analyzed at different injection current levels and heatsink temperatures. The device performance showed the optical output power of 92.8 mW, forward voltage of 4.30 V, and emission peak wavelength of 380 nm at 350 mA and 298 K. The junction temperature ( T j ) was experimentally estimated via the forward voltage method, leading to a thermal resistance of ∼10.03 K W −1 . For comparison with the simulated T j , the three‐dimensional steady‐state heat transfer simulation based on the finite element method was also carried out.