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Effect of composition‐graded interlayers in double‐heterostructure blue InGaN light‐emitting diodes
Author(s) -
Kuo YenKuang,
Chang JihYuan
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532597
Subject(s) - materials science , heterojunction , optoelectronics , light emitting diode , diode , auger effect , double heterostructure , electron , semiconductor laser theory , physics , quantum mechanics
The optical and electrical characteristics of the double‐heterostructure (DH) blue InGaN light‐emitting diodes (LEDs) with composition‐graded interlayers are studied numerically. Specifically, the detailed physical mechanisms and influences of grading layer thickness on the LED performance are explored systematically. Simulation results reveal that besides the advantages of mitigating lattice relaxation in real epitaxy, the employment of thick composition‐graded interlayers can benefit from the enhanced spatial separation of electron–hole wavefunctions, suppressed Auger recombination, and reduced polarization effect in DH active region. The illumination efficiency and electrical characteristics are markedly improved when the thick grading layers are employed.