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InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection
Author(s) -
Zhang Hezhi,
Messanvi Agnès,
Durand Christophe,
Eymery Joël,
Lavenus Pierre,
Babichev Andrey,
Julien François H.,
Tchernycheva Maria
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532573
Subject(s) - nanowire , responsivity , photodetection , materials science , optoelectronics , photocurrent , photodetector , ultraviolet , dark current , nitride , indium , visible spectrum , indium nitride , optics , nanotechnology , physics , layer (electronics)
We report on the fabrication and characterization of single nitride nanowire visible‐to‐ultraviolet p–n photodetectors. Nitride nanowires containing 30 InGaN/GaN radial quantum wells with 18% indium fraction were grown by catalyst‐free metal‐organic vapour phase epitaxy. Single nanowires were contacted using optical lithography. As expected for a radial p–n junction, the current–voltage ( I – V ) curves of single wire detectors show a rectifying behavior in the dark and a photocurrent under illumination. The detectors present a response in the visible to UV spectral range starting from 2.8 eV. The peak responsivity is 0.17 A/W at 3.36 eV. The on‐off switching time under square light pulses is found to be below 0.1 s.