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56 Gb/s L‐band InGaAlAs ridge waveguide electroabsorption modulated laser with integrated SOA
Author(s) -
Theurer M.,
Przyrembel G.,
Sigmund A.,
Molzow W.D.,
Troppenz U.,
Möhrle M.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532568
Subject(s) - materials science , optoelectronics , laser , optical amplifier , chirp , amplifier , semiconductor , semiconductor laser theory , distributed feedback laser , optics , waveguide , quantum well , wavelength , physics , cmos
We demonstrate an L‐band InGaAlAs based electroabsorption modulated DFB laser integrated with a semiconductor optical amplifier. The device can be operated with up to 56 Gb s −1 with low chirp and high output power. The device is realized with one common InGaAlAs multi quantum well structure for low fabrication costs and high yield. We describe important aspects of the device structure and present a DC and RF characterization. For the experimental characterization the focus lies on the influence of the integrated semiconductor optical amplifier (SOA) on the device performance. Cross‐sectional view of electroabsorption modulated DFB laser integrated with semiconductor optical amplifier.