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Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors
Author(s) -
Li Wenjun,
Cao Lina,
Lund Cory,
Keller Stacia,
Fay Patrick
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532564
Subject(s) - nanowire , quantum tunnelling , heterojunction , materials science , nitride , optoelectronics , transistor , field effect transistor , voltage , polarization (electrochemistry) , nanotechnology , electrical engineering , chemistry , layer (electronics) , engineering
The device concept and simulated characteristics of III‐nitride nanowire tunneling field‐effect transistors (NW TFETs) are presented. These devices employ polarization engineering in GaN/InN/GaN heterojunctions to achieve appreciable interband tunneling current densities, combined with a nanowire cylindrical gate‐all‐around geometry to achieve a high degree of gate electrostatic control. Simulations indicate that III‐nitride nanowire TFETs can be expected to achieve on–off current ratios of 10 11 , I OFF of 10 −10 µA µm −1 , sub‐threshold slopes as low as 25 mV dec −1 over 4 decades of current, and an I ON of 50 µA µm −1 at a supply voltage of 0.5 V. A parametric evaluation of the geometry dependence of the device performance is performed, and the optimal device design parameter ranges for III‐nitride NW TFETs are identified.