Enhanced InGaN/GaN photoelectrodes for visible‐light‐driven hydrogen generation by surface roughening | Zendy

Zhi Ting | Zendy; Tao Tao | Zendy; Liu Bin | Zendy; Li Mingxue | Zendy; Zhuang Zhe | Zendy; Dai Jiangping | Zendy; Li Yi | Zendy; Zhang Guogang | Zendy; Luo Wenjun | Zendy; Xie Zili | Zendy; Chen Peng | Zendy; Chen Dunjun | Zendy; Li Zhaosheng | Zendy; Han Ping | Zendy; Zou Zhigang | Zendy; Zhang Rong | Zendy; Zheng Youdou | Zendy

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Enhanced InGaN/GaN photoelectrodes for visible‐light‐driven hydrogen generation by surface roughening

Author(s) -

Zhi Ting,

Tao Tao,

Liu Bin,

Li Mingxue,

Zhuang Zhe,

Dai Jiangping,

Li Yi,

Zhang Guogang,

Luo Wenjun,

Xie Zili,

Chen Peng,

Chen Dunjun,

Li Zhaosheng,

Han Ping,

Zou Zhigang,

Zhang Rong,

Zheng Youdou

Publication year - 2016

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201532545

Subject(s) - photocurrent , materials science , optoelectronics , semiconductor , wavelength , nitride , dislocation , wide bandgap semiconductor , visible spectrum , band gap , hydrogen , nanotechnology , chemistry , layer (electronics) , organic chemistry , composite material

III‐Nitride semiconductor materials are considered as promising candidates for photoelectrodes (PEs) due to their adjustable direct band gap covering a very broad spectral range. In this study, InGaN/GaN based p–i–n photoelectrodes have been fabricated and nano‐sized surface roughening process has been applied. The photocurrent gets 2.5 times enhancement and the incident photon conversion efficiency (IPCE) is improved to be ∼30% at the wavelength of 400 nm. In addition, the turn‐on voltages of InGaN/GaN‐based PEs have been effectively reduced from +0.8 V down to about −0.4 V (vs. reversible hydrogen potential, RHE). Such improvements are mainly attributed to reduced dislocation density, increased surface area, and optimized build‐in electrical field. These findings give innovative insight to improve photoelectrochemical devices for hydrogen generation.

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