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Sb–Te–Se composite film with high‐thermal stability for phase‐change memory application
Author(s) -
Chen Liangliang,
Song Sannian,
Song Zhitang,
Li Le,
Zhang Zhonghua,
Zheng Qianqian,
Zhang Xin,
Zhu Xiuwei,
Lu Luyao,
Shao Hehong
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532536
Subject(s) - materials science , thermal stability , phase change memory , amorphous solid , composite number , doping , ternary operation , phase change material , phase (matter) , grain size , analytical chemistry (journal) , crystallization , thermal , composite material , chemical engineering , crystallography , thermodynamics , optoelectronics , chemistry , physics , programming language , organic chemistry , layer (electronics) , chromatography , computer science , engineering
The Sb–Te–Se ternary system with suitable composition material Sb 44 Te 11 Se 45 is proposed for its brilliant thermal stability, which was fabricated by doping with Sb 2 Se 3 to Sb 2 Te. Compared to the traditional Ge 2 Sb 2 Te 5 , Sb 44 Te 11 Se 45 film exhibits a higher crystallization temperature of 220 °C, a larger active energy of 4.25 eV, along with ultra‐long data retention of 133.8 °C for 10 years, which means a brilliant thermal stability. It was found that Sb 2 Se 3 doping could decrease the grain size, which makes Sb 44 Te 11 Se 45 material a more stable material for phase‐change memory (PCM) application. For the PCM cell based on Sb 44 Te 11 Se 45 , the resistance ratio between amorphous and crystalline state is up to two orders of magnitude, sufficient for data resolution. From the view‐point of thermal stability, Sb 44 Te 11 Se 45 composite film will be a potential phase‐change material for high‐temperature storage application.