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Efficient carrier‐injection and electron‐confinement in UV‐B light‐emitting diodes
Author(s) -
Kolbe T.,
Stellmach J.,
Mehnke F.,
Rothe M.A.,
Kueller V.,
Knauer A.,
Einfeldt S.,
Wernicke T.,
Weyers M.,
Kneissl M.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532479
Subject(s) - electroluminescence , materials science , light emitting diode , diode , optoelectronics , doping , ultraviolet , mole fraction , aluminium , layer (electronics) , chemistry , nanotechnology , metallurgy
The effects of the aluminum content x and the magnesium doping concentration in the Alx Ga1 − x N:Mg electron blocking layer on the emission characteristics of ultraviolet light‐emitting diodes has been investigated. The carrier injection in the light‐emitting diodes is simulated and compared with electroluminescence measurements. The light output power depends strongly on the aluminum mole fraction x as well as on the magnesium supply in the vapor phase during the growth of the Alx Ga1 − x N:Mg electron blocking layer. The highest output power has been found for an aluminum content x of around 44% and an Mg/III‐ratio of 3.0% for light‐emitting diodes with an emission wavelength near 320 nm. This effect can be attributed to an improved carrier injection and confinement preventing electron leakage into the p‐doped layers of the light‐emitting diode and an effective hole injection into the active region.