Premium
Point defects and interference effects in electron emission of Si/SiO 2 :Li,Na,K structures
Author(s) -
Buntov Evgeny,
Zatsepin Anatoly,
Slesarev Anatoly,
Mikhailovich Anna,
Mikhaylov Alexey
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532446
Subject(s) - ion , emission spectrum , materials science , electron , interference (communication) , luminescence , substrate (aquarium) , crystallographic defect , spectroscopy , atomic physics , analytical chemistry (journal) , spectral line , optoelectronics , molecular physics , chemistry , crystallography , physics , channel (broadcasting) , oceanography , organic chemistry , chromatography , quantum mechanics , astronomy , geology , electrical engineering , engineering
SiO 2 films, grown on a Si substrate and implanted with Li, Na, and K ions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate interference fringes in the experimental results. Three categories of defect states were identified and studied: intrinsic luminescent, emission‐active silica defect centers, and implanted cation‐related localized states.