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Graphene oxide/PEDOT:PSS as injection layer for quantum dot light emitting diode
Author(s) -
Chen Jing,
Pan Jiangyong,
Huang Qianqian,
Xu Feng,
Zhang Zichen,
Lei Wei,
Nathan Arokia
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532430
Subject(s) - quantum dot , pedot:pss , graphene , optoelectronics , materials science , light emitting diode , doping , exciton , oxide , diode , electroluminescence , layer (electronics) , nanotechnology , condensed matter physics , physics , metallurgy
We report a color‐saturated, red quantum dot light‐emitting diode (QD‐LED) using graphene oxide doped PEDOT:PSS (PEDOT‐GO) as the hole injection layer (HTL) to optimize the band offset between the HTL and emitting layers. As the doping concentration of the GO increases, the valence band of the PEDOT‐GO down‐shifts by 0.66 eV approaching that of the QDs. Meanwhile, the conductivity and transparency linearly changes as the doping concentration of GO increases. The QD‐LEDs show a maximum luminance of up to 4200 cd/m 2 , corresponding to 7.5 lm/W in power efficiency and a turn‐on voltage of 1.6 V. It is worth noting that the reduced turn‐on voltage can be attributed to the direct exciton recombination within the QDs. Overall, there is a sixfold enhancement in the performance of the QD‐LED with graphene oxide due to the higher hole injection/transfer rate and lower operating voltage.