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Excellent R off / R on ratio and short programming time in Cu/Al 2 O 3 ‐based conductive‐bridging RAM under low‐current (10 μA) operation
Author(s) -
Belmonte Attilio,
Fantini Andrea,
Redolfi Augusto,
Houssa Michel,
Jurczak Malgorzata,
Goux Ludovic
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532409
Subject(s) - resistive random access memory , bridging (networking) , electrical conductor , data retention , computer science , access time , materials science , nanotechnology , optoelectronics , electrical engineering , voltage , computer hardware , engineering , composite material , computer network
In this work, we prove that, for a current regime of 10 μA and using industry‐relevant programming pulse‐width, Cu/Al 2 O 3 ‐based conductive‐bridging RAM (CBRAM) cells ensure reliably larger memory window (MW) than state‐of‐the‐art oxygen‐vacancy‐based RRAM (OxRRAM) cells. Due to the intrinsically stochastic nature of the switching mechanism, the R on and R off values can be widely distributed, especially in a low‐current regime, drastically reducing the overall memory window. For this reason, in this study we adopt a statistical approach, focusing on the tails of the distributions. Using a program‐verify method we show that the larger median MW in CBRAM allows to program a MW ≥×10 using ×10 shorter programming time with respect to OxRRAM. Moreover, we show that, in order to ensure a MW >×10 after a fixed retention time, the programming time needs to be several decades larger for OxRRAM than for CBRAM.