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Electrochemical performance of boron‐doped diamond films on tungsten rods with silicon interlayer
Author(s) -
Muralidhar Pavan,
Hartl Fabian W.,
Kibler Ludwig A.,
Pasquarelli Alberto,
Strehle Steffen
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532400
Subject(s) - materials science , diamond , tungsten , silicon , electrochemistry , electrode , cyclic voltammetry , doping , boron , rod , chemical engineering , nanotechnology , composite material , metallurgy , optoelectronics , chemistry , medicine , alternative medicine , organic chemistry , pathology , engineering
Diamond films must be deposited liquid‐tight onto conductive substrates when focusing on electrochemical applications to avoid low performance or limited reproducibility due to leakage currents, corrosion, and film delamination. Here, we report on the growth of such liquid‐tight boron‐doped nanocrystalline diamond films onto tungsten rods via silicon interlayers, resembling electrochemical electrodes. These electrodes were thoroughly studied with respect to their electrochemical performance. Cyclic voltammetry revealed for instance a broad double‐layer region of about 2–3 V and low‐background currents. The electron transfer reactions were performed with [Ru(NH 3 ) 6 ]Cl 3 and K 4 [Fe(CN 6 )] solutions to study the effect of electrode properties on reaction kinetics.