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Role of Sb dopant in Ag:GeS x ‐based conducting bridge random access memories
Author(s) -
d'Acapito F.,
Souchier E.,
Noé P.,
Blaise P.,
Bernard M.,
Jousseaume V.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532383
Subject(s) - dopant , coordination number , materials science , metal , electrolyte , bridge (graph theory) , ion , doping , analytical chemistry (journal) , chemistry , crystallography , metallurgy , optoelectronics , medicine , organic chemistry , electrode , chromatography
The local structure around Sb dopants in the electrolyte of conducting bridge random access memories with Ag:GeS x composition has been investigated by grazing incidence X‐ray absorption spectroscopy (GIXAS). Sb is shown to be strongly bound to the matrix via bonds to S ions and a well‐defined second coordination shell. The GIXAS analysis on Ag revealed an increased amount of metallic Ag in samples containing Sb. These data explain the improved behaviour, in terms of data retention, of this class of materials upon Sb addition.