Premium
Dependence of the SET switching variability on the initial state in HfO x ‐based ReRAM
Author(s) -
La Torre Camilla,
Fleck Karsten,
Starschich Sergej,
Linn Eike,
Waser Rainer,
Menzel Stephan
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532375
Subject(s) - resistive random access memory , set (abstract data type) , polarity (international relations) , pulse (music) , memristor , tin , state (computer science) , switching time , work (physics) , voltage , materials science , mathematics , optoelectronics , statistical physics , computer science , electronic engineering , physics , electrical engineering , algorithm , thermodynamics , chemistry , engineering , biochemistry , programming language , metallurgy , cell
For any application of redox‐based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfO x /Pt devices on the initial state before switching. The distribution of the measured SET times covers up to seven decades in one cell. A stochastic as well as a deterministic variability component are identified by relating the initial HRS resistance – obtained from a READ pulse and from the SET pulse for comparison – to the SET time. The different resulting correlations to the SET time for the two descriptions of the initial resistance are analyzed and linked to the polarity and voltage dependence of the HRS. In addition, the origin of the resistance variation is discussed.