Characterization of a‐Se p–i–n junction fabricated using bidirectional electrolysis in NaCl(aq)

In this article, we introduce an electrochemical doping method of amorphous selenium (a‐Se) using NaCl(aq). Recently, an a‐Se photovoltaic device fabricated using this method [I. Saito, W. Miyazaki, M. Onishi, Y. Kudo, T. Masuzawa, T. Yamada, A. Koh, D. Chua, K. Soga, M. Overend, M. Aono, G. A. J. Amaratunga, and K. Okano, Appl. Phys. Lett. 98 , 152102 (2011)] has been announced and opened up the potential of a new impurity doping method. This study will further explore its possibilities by doping chlorine (Cl) and sodium (Na) and aim to fabricate a p–n junction by reversing the applied voltage during the electrolysis. The device is characterized through photoelectric measurements. The I–V characteristics show rectification under light illumination.