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Epitaxial single‐crystal of GaSe epilayers grown on a c‐sapphire substrate by molecular beam epitaxy
Author(s) -
Wu ChiaHsin,
Yang ChuShou,
Wang YenChi,
Huang HsiJung,
Ho YenTeng,
Wei LinLung,
Chang Edward Yi
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532367
Subject(s) - reflection high energy electron diffraction , epitaxy , molecular beam epitaxy , sapphire , electron diffraction , materials science , crystallography , transmission electron microscopy , substrate (aquarium) , diffraction , single crystal , optics , optoelectronics , crystal (programming language) , reflection (computer programming) , chemistry , nanotechnology , laser , physics , programming language , oceanography , layer (electronics) , geology , computer science
In this study, hetero‐epitaxy of GaSe epilayers on a c‐sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high‐energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15 min of growth, and they were correlated with the m ‐axis and a ‐axis of hexagonal GaSe. The single crystal of GaSe was verified using X‐ray diffraction and high‐resolution cross‐section transmission electron microscopy. The full width at half‐maximum of (0002) in the XRD rocking‐curve spectrum of GaSe epilayer is obtain around 207 arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large‐area epilayers.